Datasheet4U Logo Datasheet4U.com

BP104F - Silicon Phototransistor

General Description

Bestellnummer Ordering Code Q62702-P84 Q62702-P1646 Symbol Symbol Wert Value 40 + 85 20 150 Einheit Unit °C V mW Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Top; Tstg VR Ptot Semiconductor Group 2

Key Features

  • q Especially suitable for.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BP104F Silicon PIN Photodiode OSRAM
BP104FAS Silicon PIN Photodiode OSRAM
BP104FASR Silicon PIN Photodiode OSRAM
BP104FS Silicon PIN Photodiode OSRAM
BP104 Silicon PIN Photodiode Vishay Telefunken

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BP104FS Silicon Phototransistor
BP104S Silicon Phototransistor
BP103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BP103B Silicon NPN Phototransistor
BP103BF Silicon NPN Phototransistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 2.2 1.9 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.20 mm x 2.20 mm GEO06075 1.6 1.2 Approx. weight 0.1 g Chip position 1.1 0.9 1.2 1.1 0.3 0...0.1 6.7 6.2 4.5 4.3 0.9 0.7 4.0 3.7 1.7 1.5 1.6 1.2 0...5 ˚ 0.2 0.1 3.5 3.0 Photosensitive area 2.20 mm x 2.20 mm Cathode lead GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.