Datasheet Details
| Part number | BP104S |
|---|---|
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| File Size | 47.44 KB |
| Description | Silicon Phototransistor |
| Datasheet | BP104S_SiemensSemiconductorGroup.pdf |
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Overview: Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode BP 104 S Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.6 ±0.2 0.9 0.7 GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ.
| Part number | BP104S |
|---|---|
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| File Size | 47.44 KB |
| Description | Silicon Phototransistor |
| Datasheet | BP104S_SiemensSemiconductorGroup.pdf |
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Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 ...
+ 85 20 150 Einheit Unit °C V mW Top;
Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit VR = 5 V Spectral sensitivity Wellenlänge der max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BP104S | Silicon PIN Photodiode | OSRAM |
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BP104S | Silicon PIN Photodiode | Vishay |
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BP104SR | Silicon PIN Photodiode | OSRAM |
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BP104 | Silicon PIN Photodiode | Vishay Telefunken |
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BP1042 | 70 Mhz SAW Filter | RF Monolithics |
| Part Number | Description |
|---|---|
| BP104F | Silicon Phototransistor |
| BP104FS | Silicon Phototransistor |
| BP103 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| BP103B | Silicon NPN Phototransistor |
| BP103BF | Silicon NPN Phototransistor |