Datasheet4U Logo Datasheet4U.com

BP104FS Datasheet Silicon Phototransistor

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 2.2 1.9 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.20 mm x 2.20 mm GEO06075 1.6 1.2 Approx. weight 0.1 g Chip position 1.1 0.9 1.2 1.1 0.3 0...0.1 6.7 6.2 4.5 4.3 0.9 0.7 4.0 3.7 1.7 1.5 1.6 1.2 0...5 ˚ 0.2 0.1 3.5 3.0 Photosensitive area 2.20 mm x 2.20 mm Cathode lead GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1997-11-19 feo06861 feo06075 BP 104 F BP 104 FS Wesentliche Merkmale q Speziell geeignet für Anwendungen bei 950 nm q kurze Schaltzeit (typ.

General Description

Bestellnummer Ordering Code Q62702-P84 Q62702-P1646 Symbol Symbol Wert Value – 40 ...

+ 85 20 150 Einheit Unit °C V mW Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Top;

Tstg VR Ptot Semiconductor Group 2 1997-11-19 BP 104 F BP 104 FS Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Description Fotoempfindlichk

Key Features

  • q Especially suitable for.

BP104FS Distributor