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BP104FASR - Silicon PIN Photodiode

Key Features

  • Package: black epoxy.
  • Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors.
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).
  • Especially suitable for.

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Full PDF Text Transcription for BP104FASR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BP104FASR. For precise diagrams, and layout, please refer to the original PDF.

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 104 FASR  BP 104 FASR DIL SMT Silicon PIN Photodiode with Daylight Blocking Filter Applications ——Rain sensors Features:...

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de with Daylight Blocking Filter Applications ——Rain sensors Features: ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications from 730 nm to 1100 nm ——Short switching time (typ. 20 ns) ——Suitable for SMT Ordering Information Type Photocurrent Photocurrent Ordering Code  typ. Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V IP IP BP 104 FASR-Z ≥ 25 µA 34 µA Q65110A426