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F0118G OSRAM GaAs Infrared Emitting Diode

Title
Description Infrarot emittierender Chip, Oberseite Anodenanschluß, Infrared emitting die, top side anode connection 2003-04-10 1 F 0118G Elektrische Werte (TA = 25 °C) Electrical values1) (TA = 25 °C) Bezeichnung Parameter Emissionswellenlänge Peak wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 10 mA Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, ...
Features
• Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package.
• Chip size 300 x 300 µm2
• Peak wavelength: 950 nm
• Very highly efficient GaAs LED
• Good linearity (Ie = f [IF]) at high currents
• DC or pulsed operations are possible
• High reliability
• High pulse handling capability Applications
• IR remote control for hifi and TV sets, video ta...

Datasheet PDF File F0118G Datasheet - 66.76KB
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