Description
Infrarot emittierender Chip, Oberseite Anodenanschluss Rückseite AuGe Eutektikum Infrared emitting die, top side anode connection Backside AuGe eutectic alloy
2002-02-21
1
F 0118J
Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header
Features
- Typ. total radiant power: 22 mW @ 100 mA in Topled® package.
- Chip size 300 x 300 µm2.
- Very highly efficient GaAlAs LED.
- High reliability.
- High pulse handling capability.
- Good spectral match to silicon photodetectors.
- Frontside metallization: aluminum Backside metallization: gold alloy.
F0118J Datasheet
