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SFH483 - GaAlAs Infrared Emitter

Key Features

  • Fabricated in a liquid phase epitaxy process.
  • Anode is electrically connected to the case.
  • High reliability.
  • Matches all Si-Photodetectors.
  • Same package as BPX 63, BP 103, LD 242, SFH 464.
  • DIN humidity caregory in acc. with DIN 40 040 GQG.

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Datasheet Details

Part number SFH483
Manufacturer ams OSRAM
File Size 105.30 KB
Description GaAlAs Infrared Emitter
Datasheet download datasheet SFH483 Datasheet

Full PDF Text Transcription for SFH483 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SFH483. For precise diagrams, and layout, please refer to the original PDF.

GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren •...

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E7800 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit BPX 63, BP 103, LD 242, SFH 464 • Anwendungsklasse nach DIN 40 040 GQC Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • Sensorik • Lichtgitter Features • Fabricated in a liquid phase epitaxy process • Anode is electrically connected to the case • High reliability • Matches all Si-Photodetectors • Same package as BPX 63, BP 103, LD 242, SFH 464 • DIN humidity caregory in acc.