Datasheet Details
| Part number | FQPF12N50 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 398.38 KB |
| Description | 12A N-Channel MOSFET |
| Download | FQPF12N50 Download (PDF) |
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Download the FQPF12N50 datasheet PDF. This datasheet also includes the FQP12N50 variant, as both parts are published together in a single manufacturer document.
| Part number | FQPF12N50 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 398.38 KB |
| Description | 12A N-Channel MOSFET |
| Download | FQPF12N50 Download (PDF) |
|
|
|
Product Summary The FQP12N50 & FQPF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 12A < 0.52Ω TO 220 TO 220F Top View D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP12N50/FQB12N50 FQPF12N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 12 8.4 48 5.5 454 908 40 5 12* 8.4* TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP12N50/FQB12N50 65 0.5 FQPF12N50 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
0.5 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 500 600 0.54 V V/ oC IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate
FQP12N50/FQPF12N50 500V, 12A N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| FQPF12N60 | 12A N-Channel MOSFET |
| FQPF12N65 | 12A N-Channel MOSFET |
| FQPF10N60 | N-Channel MOSFET |
| FQPF10N65 | 10A N-Channel MOSFET |
| FQPF20N60 | 20A N-Channel MOSFET |
| FQPF22N50 | 22A N-Channel MOSFET |
| FQPF2N60 | 2A N-Channel MOSFET |
| FQPF4N60 | 4A N-Channel MOSFET |
| FQPF4N65 | 4A N-Channel MOSFET |
| FQPF5N50 | 5A N-Channel MOSFET |