FQP7N70/FQPF7N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
gFS Forward Transconductance
VDS=40V, ID=3.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
700
800
V
0.8 V/ oC
1
µA
10
±100 nΑ
3 4 4.5 V
1.48 1.8
Ω
6.7 S
0.76 1
V
7A
24 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
782 978 1175 pF
64 80 104 pF
5.5 7 10 pF
2 4 6Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=560V, ID=7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=350V, ID=7A,
RG=25Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
16 20.5 25
456
6.3 7.9 11.8
23
50
53
38
215 270 325
4.7 5.9 7.1
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C
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