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PACO
PACO

2SC2901 Datasheet Preview

2SC2901 Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SC2901 pdf
ST 2SC2901
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed
switching applications.
The transistor is subdivided into two groups L and
K, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (10 µs pulse)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
Ptot
Tj
Tstg
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Value
40
40
15
5
200
500
600
150
- 55 to + 150
Unit
V
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 1 V, IC = 10 mA
Current Gain Group
Collector Base Cutoff Current
at VCB = 20 V
Emitter Base Cutoff Current
at VEB = 3 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Turn-on Time
at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -VBE = 1.5 V
Storage Time
at IC = 10 mA, IB1 = -IB2 = 10 mA
Turn-off Time
at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -IB2 = 1.5 mA
Gain Bandwidth Product
at VCE = 10 V, -IE = 10 mA, f = 100 MHz
Output Capacitance
at VCB = 5 V, f = 1 MHz
L
K
hFE
hFE
ICBO
IEBO
VCE(sat)
VBE(sat)
ton
tstg
toff
fT
Cob
Min.
40
100
-
-
-
-
-
-
-
500
-
Typ.
-
-
-
-
0.15
0.8
8
6
12
750
1.8
Max.
120
200
0.1
0.1
0.25
0.85
12
13
18
-
4
Unit
-
-
µA
µA
V
V
ns
ns
ns
MHz
pF
Dated : 07/08/2003



PACO
PACO

2SC2901 Datasheet Preview

2SC2901 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

2SC2901 pdf
ST 2SC2901
Collector current vs.
collector emitter voltage
200
25 20
10
8
160
6
120 4
2
80 1
40 I B=0.5m A
0
0 0.4 0.8 1.2 1.6 2.0
VCE (V)
Total power dissipation vs.
ambient temperature
800
600
400
200
0 50 100 150 200
Ambient temperature Ta ( C)
Base and collector saturation
voltage vs. collector current
3
IC/IB=10
1 VBE(sat)
Ta=75 C -25 C 25 C
VCE(sat)
0.1
Ta=75 C -25 C
25 C
Collector current vs.
collector emitter voltage
20
180 160
140
16 120
100
12
80
8
60
4 40
IB=20 A
0 4 8 12 16 20
VCE (V)
DC current gain vs. collector current
1000
VCE=1V
25 C
Ta=75 C
100
-25 C
10
0.1
1 10
I C, mA
100
Input and output capacitance
vs. reverse voltage
30
f=1MHz
IE=0(Cob)
10 IC=0(Cib)
Cib
Cob
1
0.01
0.1
1 10
I C, mA
100
10000
Gain bandwidth product
vs. emitter current
VCE=10V
1000
100
10
-0.1
-1 -10
I E, mA
-100
0.1
0.1
1
VCB, V
VEB, V
10
100
Switching time vs. collector current
100
VCC=10V
I C/IB=10
I B1= -IB2
VBB= -5V
tr
10 tf
tstg td
1
2 10
100 200
I C, mA
Dated : 07/08/2003


Part Number 2SC2901
Description NPN Silicon Epitaxial Planar Transistor
Maker PACO
Total Page 2 Pages
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