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ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O,

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CSD18533KCS www.ti.com SLPS362A – SEPTEMBER 2012 – REVISED JANUARY 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18533KCS 1 FEATU

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ST 2SA928 PNP Silicon Epitaxial Planar Transistor for audio power amplifier The transistor is subdivided into two groups, O and Y, according to its DC

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ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided

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LLDB3, LLDB4 Silicon Bidirectional Trigger Diodes These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-mo

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ST 2SA1266 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y a

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ST 2SC1393 NPN Silicon Epitaxial Planar Transistor TV VHF TUNER RF AMPLIFIER (FORWARD AGC) The transistor is subdivided into three group, R, O and Y,

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ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 t

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ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 t

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RoHS compliant 1310 nm Single-mode Transceiver Gigabit Interface Converters (GBIC), 3.3V/5V 1.0625Gbd Fiber Channel/1.25 Gigabit Ethernet Features Co

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CSD18533Q5A www.ti.com SLPS388 – SEPTEMBER 2012 60-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18533Q5A 1 FEATURES Ultra Low Qg and Qgd

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ST 2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y,

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ST 2SA928 PNP Silicon Epitaxial Planar Transistor for audio power amplifier The transistor is subdivided into two groups, O and Y, according to its DC

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ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O,

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ST 2SC1393 NPN Silicon Epitaxial Planar Transistor TV VHF TUNER RF AMPLIFIER (FORWARD AGC) The transistor is subdivided into three group, R, O and Y,

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LLDB3, LLDB4 Silicon Bidirectional Trigger Diodes These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-mo

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1SS133 Silicon Epitaxial Planar Switching Diode Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching A

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RoHS Compliant CWDM 1310 nm Single-mode Transceiver ,24dB margin Gigabit Interface Converters (GBIC), 3.3/5 V 1.0625Gbd Fiber Channel/1.25 Gigabit Eth

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RoHS Compliant CWDM 1310 nm Single-mode Transceiver ,24dB margin Gigabit Interface Converters (GBIC), 3.3/5 V 1.0625Gbd Fiber Channel/1.25 Gigabit Eth

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RoHS Compliant CWDM 1310 nm Single-mode Transceiver ,24dB margin Gigabit Interface Converters (GBIC), 3.3/5 V 1.0625Gbd Fiber Channel/1.25 Gigabit Eth

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