C3195 Overview
Key Specifications
Operating Voltage: 5 V
Max Voltage (typical range): 5.25 V
Min Voltage (typical range): 4.75 V
Max Frequency: 190 MHz
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 22 RDS(on) - On-State Resistance (mΩ) 20 18 16 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 75A TC = 125ºC Id = 75A GATE CHARGE 10 ID = 75A VDS = 30V 8 6 4 2 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 5 10 15 20 25 Qg - Gate Charge (nC) 30 35 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the.
