C3195 - NPN Silicon Epitaxial Planar Transistor

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package.

C3195 npn silicon epitaxial planar transistor by PACO - Datasheet Preview

Datasheet Details

Part number	C3195
Manufacturer	PACO
File Size	100.51 KB
Description	NPN Silicon Epitaxial Planar Transistor
Datasheet	C3195 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18533KCS www.ti.com SLPS362A – SEPTEMBER 2012 – REVISED JANUARY 2013 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18533KCS 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 28 3.9 VGS = 4.5V VGS = 10V 1.9 6.