The C3195 is a NPN Silicon Epitaxial Planar Transistor.
| Operating Voltage | 5 V |
|---|---|
| Max Voltage (typical range) | 5.25 V |
| Min Voltage (typical range) | 4.75 V |
| Max Frequency | 190 MHz |
| Length | 29.3116 mm |
| Width | 29.3116 mm |
| Max Operating Temp | 70 °C |
| Min Operating Temp | 0 °C |
| Part Number | C3195 Datasheet |
|---|---|
| Manufacturer | PACO |
| Overview | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 22 RDS(on) - On-State Resistance (mΩ) 20 18 16 14 12 10 8 6 . Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist. |
| Part Number | C3195 Datasheet |
|---|---|
| Description | NPN silicon |
| Manufacturer | FGX |
| Overview | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 32 RDS(on) - On-State Resistance (mΩ) 28 24 20 16 12 8 4 0 0. Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist. |
| Seller | Inventory | Price Breaks | Buy |
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| Rochester Electronics | 908 | 25+ : 27.46 USD 100+ : 26.09 USD 500+ : 24.71 USD 1000+ : 23.34 USD |
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| Verical | 908 | 25+ : 34.325 USD 100+ : 32.6125 USD 500+ : 30.8875 USD 1000+ : 29.175 USD |
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| DigiKey Marketplace | 908 | 9+ : 34.33 USD | View Offer |