C3195 Overview
Key Specifications
Operating Voltage: 5 V
Max Voltage (typical range): 5.25 V
Min Voltage (typical range): 4.75 V
Max Frequency: 190 MHz
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 32 RDS(on) - On-State Resistance (mΩ) 28 24 20 16 12 8 4 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 40A TC = 125ºC Id = 40A GATE CHARGE 10 ID = 40A VDS = 30V 8 6 4 2 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 2 4 6 8 10 12 14 Qg - Gate Charge (nC) 16 18 20 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
