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C3195 Datasheet PDF

FGX C3195

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Part No. C3195
Datasheet C3195 Download
Manufacturer
FGX
Description NPN silicon
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C3195 datasheet page 1 preview

FEATURES

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 19 3.1 VGS = 4.5V VGS = 10V 1.9 10.2 7.6 UNIT V nC nC mΩ mΩ V
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● 2 ORDERING INFORMATION Device CSD18534KCS Package TO-220 Plastic Package Media Tube Qty 50 Ship Tube

APPLICATIONS

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● DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control

ABSOLUTE MAXIMUM RATINGS

TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM PD TJ, TSTG EAS Pulsed Drain Current (1) Power Dissipation Operating Junction and Storage Temperature Range Avalanche Energy,...