Datasheet Details
| Part number | C3195 |
|---|---|
| Manufacturer | FGX |
| File Size | 144.75 KB |
| Description | NPN silicon |
| Datasheet | C3195-FGX.pdf |
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Overview: CSD18534KCS .ti. SLPS383 – SEPTEMBER 2012 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples:.
| Part number | C3195 |
|---|---|
| Manufacturer | FGX |
| File Size | 144.75 KB |
| Description | NPN silicon |
| Datasheet | C3195-FGX.pdf |
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The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
(1) Pulse duration ≤300μs, duty cycle ≤2% 32 RDS(on) - On-State Resistance (mΩ) 28 24 20 16 12 8 4 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 40A TC = 125ºC Id = 40A GATE CHARGE 10 ID = 40A VDS = 30V 8 6 4 2 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 2 4 6 8 10 12 14 Qg - Gate Charge (nC) 16 18 20 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| PACO | C3195 | NPN Silicon Epitaxial Planar Transistor | PACO |
| Part Number | Description |
|---|---|
| C3199 | NPN SILICON TRANSISTOR |