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PINGWEI

11N65HS Datasheet Preview

11N65HS Datasheet

N-Channel MOSFET

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11N65(F,B,H)S
11 Amps,650 Volts N-Channel Super Junction Power MOSFET
FEATURE
11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
11N65S
ITO-220AB
11N65FS
TO-263
11N65BS
TO-262
\
11N65HS
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
11N65(F,B,H)S
650
±30
11
33
280
5.5
0.5
15
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Symbol
Rth(J-c)
Rth(ch-c)
Rth(ch-a)
PD
ITO-220
3.82
3.82
80
32.7
TO-220
1.03
1.03
62
121
TO-262/263
1.03
1.03
62
121
Units
/W
/W
/W
W
Version1.0-2015.2
www.perfectway.cn




PINGWEI

11N65HS Datasheet Preview

11N65HS Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=650V,VGS=0V
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=5.5A
VDS=50V,VGS=0V,
f=1.0MHZ
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=380V,ID=5.5A,
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
RG=6.8Ω
(Note4,5)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=480V,ID=11A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=11A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=11A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,L=4.6mH,Rg=25Ω,IAS=11A ,starling TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
600
0.6
V
V/
1
μA
1
μA
-1
μA
2
4
V
0.30 0.36
Ω
1030
pF
87
pF
4.5
pF
9
ns
4
ns
40
ns
4.5
ns
23
nC
5.7
nC
8.0
nC
11
A
33
A
1.3
V
245
ns
2.4
μC
Version1.0-2015.2
www.perfectway.cn


Part Number 11N65HS
Description N-Channel MOSFET
Maker PINGWEI
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11N65HS Datasheet PDF






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