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P3C1011 - HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM

General Description

The P3C1011 is a 131,072 words by 16 bits high-speed CMOS static RAM.

The CMOS memory requires no clocks or refreshing, and has equal access and cycle times.

Inputs are fully TTL-compatible.

Key Features

  • High Speed (Equal Access and Cycle Times).
  • 10/12/15/20 ns (Commercial).
  • 12/15/20 ns (Industrial).
  • 20/25/35 (Military) Low Power.
  • 360 mW (max. ) Single 3.3V ± 0.3V Power Supply.

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Datasheet Details

Part number P3C1011
Manufacturer PYRAMID
File Size 105.95 KB
Description HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM
Datasheet download datasheet P3C1011 Datasheet

Full PDF Text Transcription for P3C1011 (Reference)

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P3C1011 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (Industrial) — 20/25/3...

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es) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (Industrial) — 20/25/35 (Military) Low Power — 360 mW (max.) Single 3.3V ± 0.3V Power Supply DESCRIPTION The P3C1011 is a 131,072 words by 16 bits high-speed CMOS static RAM. The CMOS memory requires no clocks or refreshing, and has equal access and cycle times. Inputs are fully TTL-compatible. The RAM operates from a single 3.3V ± 0.3V tolerance power supply. Access times as fast as 10 nanoseconds permit greatly enhanced system operating speeds. CMOS is utilized to reduce power consumption to a low level. The P3C1011 is a member of a family of PACE RAM™ products offering fas