PYRAMID Datasheet | Specifications & PDF Download

P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10

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P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (C

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Industrial) – 20/25/35

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P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) –

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PACE1757M/ME COMPLETE EMBEDDED CPU SUBSYSTEM FEATURES Implements complete MIL-STD-1750A ISA including optional MMU, MFSR, and BPU functions. Two thro

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P4C189 HIGH SPEED 16 x 4 STATIC CMOS RAM WITH INVERTING OUTPUTS FEATURES 16 x 4 Static RAM Fast Access Time – 35 ns Commercial and Industrial Availab

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FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 4.9ns max (MIL) Output levels compatible with TTL and CMO

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FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 5.1ns max (MIL) Output levels compatible with TTL and CMO

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P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —45/55/70/100 ns Single 5 Volts

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P4C1041 HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (

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P4C1298/P4C1298L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Com

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P4C1258 ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/I

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FEATURES VCC Current (L/LL) — Operating: 70mA/50mA — CMOS Standby: 100µA/10µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expa

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P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) – 12/15/20/25/35 ns (Commercial) – 15/20/25/35/45

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FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time High-Speed Read-Access Time – 8/10/12/15/20/25 ns (Commercial) – 15/20/25 n

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P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (

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P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

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FEATURES High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495

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P3C1021 HIGH SPEED 64K x 16 (1 MEG) STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (I

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