PYRAMID Datasheet | Specifications & PDF Download

FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 5.1ns max (MIL) Output levels compatible with TTL and CMO

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P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/20/25/35 ns (Commercial/Industria

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FEATURES EPROM Technology for reprogramming High Speed – 25/35/45/55 ns (Commercial) – 25/35/45/55 ns (Military) Low Power Operation: – 66

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P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45/

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P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45/

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FEATURES Fast Access Times - 10/12/15/20 ns Low Power Operation Single 3.3V ± 0.3V Power Supply 2.0V Data Retention Easy Memory Expansion Us

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P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

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P1750AE/SOS SINGLE CHIP, 30MHz, ENHANCED SPACE PROCESSOR FEATURES Implements the MIL-STD-1750A Instruction Set Architecture Single Chip MIL-STD-1750A

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P1750A/SOS SINGLE CHIP, 20MHz to 30MHz, CMOS/SOS SPACE PROCESSOR FEATURES Implements the MIL-STD-1750A Instruction Set Architecture CMOS/SOS Processo

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FEATURES Function, Pinout and Drive Compatible with the FCT and F Logic FCT-A speed at 4.9ns max (MIL) Output levels compatible with TTL and CMO

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P3C1011 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM FEATURES High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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FEATURES High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) CMOS for Low Power – 495

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FEATURES VCC Current (Commercial/Industrial) — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Milita

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P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —45/55/70/100 ns Single 5 Volts

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P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10

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P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (C

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P93U422 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Universal 256 x 4 Static RAM One part, the P93U422, replaces the following bipolar and CMOS parts:

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FEATURES Fast Access Time - 55 ns Low Power Operation Single 5V±10% Power Supply 2.0V Data Retention Easy Memory Expansion Using CE and OE I

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FEATURES Full CMOS High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 12/15/20/25 ns (Industrial) – 25/35/45/55/70 ns

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