PJ4N3KDW Description
PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected.
PJ4N3KDW Key Features
- RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω
- RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- The MOSFET elements are independent,eliminating interference
- Mounting cost and area can be cut in half
- Very Low Leakage Current In Off Condition
- Specially Designed for Battery Operated Systems,Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memorie
- Low voltage drive (2.5V) makes this device ideal for portable equipment
- ESD Protected 2KV HBM