PJP4N60 Description
PJP4N60 / PJF4N60 600V N-Channel Enhancement Mode MOSFET.
PJP4N60 Key Features
- 4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 2.4 10 +1 0 0
- VDD=300V ,I D =4A VGS=10V ,RG=25Ω
- 300 2 .2
- A A V ns uC