PJP10N60 Datasheet | PanJit Semiconductor

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET Features - 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 2 G 3 D 2 G 3 S D MECHANICAL DATA - Case: TO-220AB / ITO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP10N60 PJF10N60 MARKING P10N60 F10N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source...