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PJP10N60 - 600V N-Channel Enhancement Mode MOSFET

Key Features

  • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

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Full PDF Text Transcription for PJP10N60 (Reference)

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PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5....

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0V, ID=5.