PJP10N65 Datasheet | PanJit Semiconductor

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET Features - 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G MECHANICAL DATA - Case: TO-220AB / ITO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 PJF10N65 MARKING P10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3...