PJP10N65 Overview
Key Features
- 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL
| Part | PJP10N65 |
|---|---|
| Description | 650V N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | PanJit Semiconductor |
| Size | 259.30 KB |
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