PJP10N65 Description
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET.
PJP10N65 Key Features
- 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 1.0 10 +1 0 0
- t d (o n) tr t d (o ff) tf C C C
- 450 4 .2
- A A V ns uC