PJP5N60 Description
PJP5N60 / PJF5N60 600V N-Channel Enhancement Mode MOSFET.
PJP5N60 Key Features
- 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 2.1 10 +1 0 0
- VDD=300V , I D =5.0A VGS=10V , RG=25Ω
- 270 2 .0
- A A V ns uC