PJP6000 - 60V N-Channel Enhancement Mode MOSFET

PanJit Semiconductor

Key Features

RDS(ON), VGS@10V,IDS@30A=14mΩ.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Specially Designed for Converters and Power Motor Controls.
Fully Characterized Avalanche Voltage and Current www. DataSheet4U. com.
In compliance with EU RoHS 2002/95/EC directives.

PJP6000 60v n-channel enhancement mode mosfet by PanJit Semiconductor - Datasheet Preview

Datasheet Details

Part number	PJP6000
Manufacturer	PanJit Semiconductor
File Size	159.34 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	PJP6000 Datasheet

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Full PDF Text Transcription (Reference)

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PJP6000 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=14mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current www.DataSheet4U.