Datasheet4U.com

PJP830 - 500V N-Channel Enhancement Mode MOSFET

Pan Jit International

📥 Download Datasheet

PJP830 Datasheet Preview — Preview of PJP830 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: PJP830
Manufacturer: Pan Jit International
File Size: 231.75 KB
Datasheet: PJP830_PanJitInternational.pdf
Description: 500V N-Channel Enhancement Mode MOSFET

PJP830 Product details

Features

4.5A , 500V, RDS(ON)=1.5Ω@VGS=10V, ID=2.5A.
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G.

📁 Related Datasheet

PJP15N65D - N-Channel MOSFETS (Potens semiconductor)
PJP20N65D - N-Channel MOSFETS (Potens semiconductor)

📌 All Tags

500V N-Channel Enhancement Mode MOSFET Pan Jit International

Pan Jit International PJP830-like datasheet

PJP840 - 500V N-Channel Enhancement Mode MOSFET
PJP8N60 - 600V N-Channel Enhancement Mode MOSFET
PJP8NA50 - 500V N-Channel MOSFET
PJP10N60 - 600V N-Channel Enhancement Mode MOSFET
PJP10N65 - 650V N-Channel Enhancement Mode MOSFET
PJP12N65 - 650V N-Channel Enhancement Mode MOSFET

PJP830 Stock/Price