Datasheet4U Logo Datasheet4U.com

2PG006 Datasheet Silicon N-channel Enhancement IGBT

Manufacturer: Panasonic

Overview: IGBT This product plies with the RoHS Directive (EU 2002/95/EC). PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.

Key Features

  • s.
  • Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
  • High-speed switching: tf = 175 ns (typ. ).
  • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES.
  • 30 to +35 V Collector current IC 40 A Peak collector current.
  • ICP 230 A Power dissipation 40 W Ta = 25°C PC 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg.
  • 55.

More Datasheets from Panasonic

Part Number Description
2PG001 N-channel enhancement mode IGBT
2PG002 N-Channel IGBT
2PG009 Silicon N-Channel IGBT
2PG011 Silicon N-Channel Enhancement IGBT

2PG006 Distributor