2PG002 - N-Channel IGBT

Datasheet Summary

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
High speed hall time: tf = 190 nsec(typ. ).
Package.
Code TO-220F-A1.
Marking Symbol: 2PG002.
Pin Name 1. Gate 2. Collector 3. Emitter Parameter Symbol VCES IC VGES ICP PC Tj Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
Power dissipation Ta = 25°C Junction temperature Storage temperature Tstg Note).

Panasonic

📥 Download Datasheet

Datasheet Details

Part number	2PG002
Manufacturer	Panasonic
File Size	309.88 KB
Description	N-Channel IGBT
Datasheet	2PG002 Datasheet
Additional preview pages of the 2PG002 datasheet.

📁 Similar Datasheet

2PG401 - Insulated Gate Bipolar Transistor (Panasonic Semiconductor)
2PG402 - Insulated Gate Bipolar Transistor (Panasonic Semiconductor)

Other Datasheets by Panasonic

2PG001 - N-channel enhancement mode IGBT
2PG006 - Silicon N-channel enhancement IGBT
2PG009 - Silicon N-Channel IGBT
2PG011 - Silicon N-Channel Enhancement IGBT

Full PDF Text Transcription

Click to expand full text

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 190 nsec(typ.)  Package  Code TO-220F-A1  Marking Symbol: 2PG002  Pin Name 1. Gate 2. Collector 3. Emitter Parameter Symbol VCES IC VGES ICP PC Tj Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation Ta = 25°C Junction temperature Storage temperature Tstg Note) *: PW ≤ 10 us, Duty ≤ 1.

Published: Mar 25, 2014 |