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2PG002 - N-Channel IGBT

Key Features

  • s.
  • Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
  • High speed hall time: tf = 190 nsec(typ. ).
  • Package.
  • Code TO-220F-A1.
  • Marking Symbol: 2PG002.
  • Pin Name 1. Gate 2. Collector 3. Emitter Parameter Symbol VCES IC VGES ICP PC Tj Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
  • Power dissipation Ta = 25°C Junction temperature Storage temperature Tstg Note).

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High speed hall time: tf = 190 nsec(typ.)  Package  Code TO-220F-A1  Marking Symbol: 2PG002  Pin Name 1. Gate 2. Collector 3. Emitter Parameter Symbol VCES IC VGES ICP PC Tj Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation Ta = 25°C Junction temperature Storage temperature Tstg Note) *: PW ≤ 10 us, Duty ≤ 1.