2PG009 Overview
This product plies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits.
2PG009 Key Features
- Low collector-emitter saturation voltage: VCE(sat) < 2.5 V
- High-speed switching: tf = 185 ns (typ.)
- Package
- Code TO-220D-A1
- Marking Symbol: 2PG009
- Pin Name 1. Gate 2. Collector 3. Emitter
- Power dissipation
- Electrical Characteristics TC = 25°C±3°C
- VGE(th) -VCE Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf