2PG009 - Silicon N-Channel IGBT

Datasheet Summary

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V.
High-speed switching: tf = 185 ns (typ. ).
Package.
Code TO-220D-A1.
Marking Symbol: 2PG009.
Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note).
: Assurance of re.

Panasonic

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Datasheet Details

Part number	2PG009
Manufacturer	Panasonic
File Size	417.29 KB
Description	Silicon N-Channel IGBT
Datasheet	2PG009 Datasheet
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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)  Package  Code TO-220D-A1  Marking Symbol: 2PG009  Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively. T ≤ 5.

Published: Feb 20, 2014 |