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2PG006 - Silicon N-channel enhancement IGBT

Datasheet Summary

Features

  • s.
  • Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
  • High-speed switching: tf = 175 ns (typ. ).
  • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES.
  • 30 to +35 V Collector current IC 40 A Peak collector current.
  • ICP 230 A Power dissipation 40 W Ta = 25°C PC 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg.
  • 55.

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Datasheet Details

Part number 2PG006
Manufacturer Panasonic
File Size 344.27 KB
Description Silicon N-channel enhancement IGBT
Datasheet download datasheet 2PG006 Datasheet
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Full PDF Text Transcription

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IGBT This product complies with the RoHS Directive (EU 2002/95/EC). PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.
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