2PG006 Description
IGBT This product plies with the RoHS Directive (EU 2002/95/EC). PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching...
2PG006 Key Features
- Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
- High-speed switching: tf = 175 ns (typ.)