Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
High-speed switching: tf = 175 ns (typ. ).
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (E-B short)
VCES
430
V
Gate-emitter voltage (E-B short)
VGES.
30 to +35
V
Collector current
IC 40 A
Peak collector current.
ICP 230
A
Power dissipation
40 W
Ta = 25°C
PC
2.0
W
Junction temperature
Tj 150 °C
Storage temperature
Tstg.
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IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
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2PG006
Silicon N-channel enhancement IGBT
For plasma display panel drive For high speed switching circuits
Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High-speed switching: tf = 175 ns (typ.
2PG006 Datasheet
