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2SB1169 - Power Transistors

Features

  • s.
  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Low collector-emitter saturation voltage VCE(sat).
  • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0).
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction t.

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Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −1 −2 15 1.3 150 −55 ∼ +150 °C °C V A A W V Unit V 12.6±0.3 7.2±0.3 (1.0) 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 0.9±0.
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