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2SB1169A - Power Transistors

Download the 2SB1169A datasheet PDF. This datasheet also covers the 2SB1169 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s.
  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Low collector-emitter saturation voltage VCE(sat).
  • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0).
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1169_Panasonic.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1169A Transistors Kexin
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2SB1161 SILICON POWER TRANSISTOR SavantIC
2SB1161 PNP Transistor INCHANGE

Other Datasheets by Panasonic

Part Number Description
2SB1169 Power Transistors
2SB1173 Silicon PNP epitaxial planar type Transistor
2SB1173A Silicon PNP epitaxial planar type Transistor
2SB1174 Silicon PNP epitaxial planar type Transistor
2SB1175 Silicon PNP epitaxial planar type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −1 −2 15 1.3 150 −55 ∼ +150 °C °C V A A W V Unit V 12.6±0.3 7.2±0.3 (1.0) 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 0.9±0.