2SB1169 Datasheet Power Transistors

Manufacturer: Panasonic

Overview: Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm.

Datasheet Details

s.
High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat).
I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0).
Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction t.

Brand Logo	Part Number	Description	Manufacturer
	2SB1169A	Transistors	Kexin

Part Number	Description
2SB1169A	Power Transistors
2SB1173	Silicon PNP epitaxial planar type Transistor
2SB1173A	Silicon PNP epitaxial planar type Transistor
2SB1174	Silicon PNP epitaxial planar type Transistor
2SB1175	Silicon PNP epitaxial planar type Transistor
2SB1179	Silicon PNP epitaxial planar type Transistor
2SB1179A	Silicon PNP epitaxial planar type Transistor
2SB1180	Silicon PNP Transistor
2SB1180A	Silicon PNP Transistor
2SB1193	Silicon PNP Transistor