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2SB1180A - Silicon PNP Transistor

Download the 2SB1180A datasheet PDF (2SB1180 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon pnp transistor.

Features

  • s.
  • High forward current transfer ratio hFE.
  • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) (1.0) 1.1±0.1 1.0±0.2.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1180 2SB1180A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1180_Panasonic.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Panasonic
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Full PDF Text Transcription

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Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) (1.0) 1.1±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1180 2SB1180A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 15 1.3 150 −55 to +150 °C °C V A A W V Unit V 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 0.9±0.1 0˚ to 0.
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