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2SB1499A Datasheet

Silicon PNP epitaxial planar type Power Transistors

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Power Transistors
2SB1499, 2SB1499A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1499
base voltage 2SB1499A
VCBO
–60
–80
Collector to 2SB1499
emitter voltage 2SB1499A
VCEO
–60
–80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–8
–4
15
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
current
2SB1499
ICES
2SB1499A
Collector cutoff
current
2SB1499
ICEO
2SB1499A
Emitter cutoff current
Collector to emitter 2SB1499
voltage
2SB1499A
IEBO
VCEO
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –4A, IB = – 0.4A
VCE = –10V, IC = – 0.1A, f = 10MHz
–60
–80
70
15
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
–400
–400
–700
–700
–1
250
µA
µA
mA
V
–2 V
–1.5 V
30 MHz
0.2 µs
0.5 µs
0.2 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
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Panasonic Electronic Components Datasheet

2SB1499A Datasheet

Silicon PNP epitaxial planar type Power Transistors

No Preview Available !

Power Transistors
PC — Ta
20
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–6
IB=–120mA TC=25˚C
–5 –100mA
–80mA
–4
–60mA
–3 –40mA
–2 –20mA
–10mA
–1 –8mA
–5mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1499, 2SB1499A
IC — VBE
–10
VCE=–4V
–8
25˚C
–6 TC=100˚C –25˚C
–4
–2
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
TC=100˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
hFE — IC
VCE=–4V
1000
300
100
TC=100˚C
–25˚C
25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
fT — IC
VCE=–5V
f=10MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10 ICP
–3 IC
10ms
–1
– 0.3
t=1ms
DC
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
100 (1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103 104
2
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Part Number 2SB1499A
Description Silicon PNP epitaxial planar type Power Transistors
Maker Panasonic
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2SB1499A Datasheet PDF






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