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2SD2137A Datasheet

Silicon NPN triple diffusion planar type Power Transistors

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Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
I Features
High forward current transfer ratio hFE which has satisfactory
linearity
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base 2SD2137
voltage
2SD2137A
VCBO
60
80
V
Collector to
emitter voltage
2SD2137
2SD2137A
VCEO
60
80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
6
5
3
15
2
150
55 to +150
V
A
A
W
°C
°C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff
current
2SD2137
2SD2137A
Collector cutoff
current
2SD2137
2SD2137A
Emitter cutoff current
Collector to emitter
voltage
2SD2137
2SD2137A
ICES
ICEO
IEBO
VCEO
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
IC = 30 mA, IB = 0
100 µA
100
100 µA
100
100 µA
60 V
80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1 *
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 5 V, IC = 0.2 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A,
VCC = 50 V
70 250
10
1.8 V
1.2 V
30 MHz
0.3 µs
2.5 µs
0.2 µs
Note) *: Rank classification
Rank
Q
hFE1 70 to 150
R
120 to 250
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
334


Panasonic Electronic Components Datasheet

2SD2137A Datasheet

Silicon NPN triple diffusion planar type Power Transistors

No Preview Available !

Power Transistors
2SD2137, 2SD2137A
PC Ta
20
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC VCE
6
TC=25˚C
5
IB=100mA
90mA
80mA
4 70mA
60mA
50mA
3 40mA
30mA
2 20mA
10mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) IC
100
IC/IB=8
30
10
3
1
TC=100˚C
0.3 25˚C
0.1
0.03 25˚C
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC VBE
6
VCE=4V
5
4
3
TC=100˚C
2 25˚C
1
25˚C
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
hFE IC
1000
300 TC=100˚C
25˚C
25˚C
100
VCE=4V
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT IC
VCE=5V
f=10MHz
TC=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1 3 10 30 100
Collector to base voltage VCB (V)
ton, tstg, tf IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10 (IB1=IB2)
VCC=50V
10 TC=25˚C
tstg
3
1
ton
0.3
tf
0.1
0.03
0.01
0
123
Collector current IC (A)
4
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1
0.3
10ms
DC
t=1ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
335


Part Number 2SD2137A
Description Silicon NPN triple diffusion planar type Power Transistors
Maker Panasonic
Total Page 4 Pages
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