2SK2210
2SK2210 is Silicon N-Channel Power F-MOS manufactured by Panasonic.
Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
Allowable power dissipation
TC= 25˚C Ta= 25˚C
Channel temperature
Storage temperature
- L= 5m H, IL= 4A, 1 pulse
Symbol VDSS VGSS ID IDP EAS
- PD
Tch Tstg
Rating 750 ±30 ±4 ±8 40 50 2 150
- 55 to +150
Unit V V A A m J
˚C ˚C s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance
Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a)
Condition VDS= 600V, VGS= 0 VGS= ±30V, VDS= 0 ID=1m A, VGS= 0 VDS= 25V, ID=1m A VGS=10V, ID= 2A VDS= 25V, ID= 2A IDR=4A, VGS= 0
VDS= 20V, VGS= 0, f=1MHz
VDD= 200V, ID= 2A VGS=10V, RL=100Ω lifecycleaen
13.7-+00..25dce 4.1±0.2 Solder Dip stage.
15.0±0.3/
8.0±0.2 3.0±0.2
9.9±0.3 ø3.2±0.1
Unit : mm
4.6±0.2 2.9±0.2
1.2±0.15 1.45±0.15
2.6±0.1 0.7±0.1
0.75±0.1
2.54±0.2 5.08±0.4
7˚ 1 2 3
1 : Gate 2 : Drain 3 : Source TO-220E Package
Min Typ Max Unit
10 µ A
±1 µ...