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Panasonic Electronic Components Datasheet

2SK2210 Datasheet

Silicon N-Channel Power F-MOS

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Power F-MOS FETs
2SK2210
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
dissipation
TC= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
* L= 5mH, IL= 4A, 1 pulse
Symbol
VDSS
VGSS
ID
IDP
EAS *
PD
Tch
Tstg
Rating
750
±30
±4
±8
40
50
2
150
–55 to +150
Unit
V
V
A
A
mJ
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Condition
VDS= 600V, VGS= 0
VGS= ±30V, VDS= 0
ID=1mA, VGS= 0
VDS= 25V, ID=1mA
VGS=10V, ID= 2A
VDS= 25V, ID= 2A
IDR=4A, VGS= 0
VDS= 20V, VGS= 0, f=1MHz
VDD= 200V, ID= 2A
VGS=10V, RL=100
2SK2210
9.9±0.3
ø3.2±0.1
Unit : mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7˚ 1 2 3
1 : Gate
2 : Drain
3 : Source
TO-220E Package
Min Typ Max Unit
10 µ A
±1 µ A
750 V
2 4V
1.8 2.4
1.3 2.2
S
–1.6 V
600 pF
105 pF
45 pF
25 ns
50 ns
65 ns
170 ns
2.5 ˚C/W
62.5 ˚C/W


Panasonic Electronic Components Datasheet

2SK2210 Datasheet

Silicon N-Channel Power F-MOS

No Preview Available !

Power F-MOS FETs
2SK2210
Area of safe operation (ASO)
30
20 t=10ms t=1ms
10 IDP
t=100ms
t=0.5ms
ID
3
2 t=1ms
t=10ms
1 t=100ms
t=1ms
t=10ms
0.3 t=100ms
0.2 DC
0.1 t=100ms
Non repetitive pulse
DC
TC=25˚C
0.03 Broken lines indicate the ASO renge of TC=85˚C
3 10 30 100 300
1000
Drain-Source voltage VDS (V)
ID –VDS
6
TC=25˚C
5
4
3 5.5V
2
5V
1 50W
4.5V
4V
0
0 10 20 30 40 50 60
Drain-Source voltage VDS (V)
RDS(on) – ID
6
VGS=10V
ID=2.0A
5
max.
typ.
4 min.
3
2
1
0
-25 0 25 50 75 100 125 150
Case temperature TC (˚C)
PD – Ta
60
(1) TC=Ta
(2) Without heat sink
(PD=2W)
50
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IAS – L-load
10
VDD=50V
5
40mJ (TC=25˚C)
3
2
22.5mJ (TC=85˚C)
1
0.5
0.3 1.6mJ (TC=150˚C)
0.2
0.1
0.05
0.01
0.03 0.1 0.3
L-load (mH)
1
ID – VGS
6
VDS=25V
5
4
TC=25˚C TC=150˚C
3
2
1
0
0 2 4 6 8 10 12
Gate-Source voltage VGS (V)
Vth – TC
6
VDS=25V
ID=1mA
5
4
3
max.
2 min. typ.
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
RDS(on) – TC
6
TC=25˚C
5
4
3 VGS=6V
10V
15V
2
1
0
012345
Drain current ID (A)
| Yfs | – ID
3.0
VDS=25V
TC=25˚C
2.5
2.0
1.5
1.0
0.5
0
012345
Drain current ID (A)


Part Number 2SK2210
Description Silicon N-Channel Power F-MOS
Maker Panasonic
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2SK2210 Datasheet PDF






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