* Gate-source surrender voltage VGSS : ±25 V guaranteed
* Avalanche energy capability guaranteed: EAS > 216 mJ
* High-speed switching: tf = 90 ns (typ.)
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surr
2SK4174
Panasonic
297.18 KB
Silicon n-channel enhancement mos fet.
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