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RF PhotoMOS (AQV221N)
Lower output capacitance and
RF PhotoMOSon resistance. High speed
switching. (Turn on time: 0.2ms, Turn off time: 0.08ms).
(AQV221N)
8.8 .346
6.4 .252
3.9
.154
8.8 .346
1 2 3
6.4 .252
3.6 .142
mm inch
6 5 4
FEATURES
1. Low output capacitance between output terminals and low ONresistance
2. High speed switching (Turn on time: typ. 200μs)
3. High sensitivity Control loads up to 250mA with input current 5mA
4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, where as this PhotoMOS relay has typ. 20pA even with the rated load voltage
5. Controls low-level analog signals PhotoMOS relays features extremely low-closed-circuit offset voltage to enable control of low-level analog signals without distortion
6.
AQV221N Datasheet
