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AQV227NA - PhotoMOS RELAY / Low On-Resistance

This page provides the datasheet information for the AQV227NA, a member of the AQV227N PhotoMOS RELAY / Low On-Resistance family.

Datasheet Summary

Features

  • 1. Low output capacitance and high response speed The capacitance between output terminals is small; Typ. 10pF. This enables a fast operation speed of Typ. 0.2ms. 2. High sensitivity and low onresistance Max. 0.1 A of load current can be controlled with input current of 5 mA. The on resistance is less than our conventional models. 3. Low-level off state leakage current of Typ. 0.03nA (AQV227N) 4. Controls low-level analog signals.

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Datasheet preview – AQV227NA

Datasheet Details

Part number AQV227NA
Manufacturer Panasonic
File Size 156.82 KB
Description PhotoMOS RELAY / Low On-Resistance
Datasheet download datasheet AQV227NA Datasheet
Additional preview pages of the AQV227NA datasheet.

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Full PDF Text Transcription

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DIP6-pin type featuring low on-resistance 200V/400V load voltage RF 1 Form A Low on-resistance (AQV22❍N) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 16 25 34 RoHS compliant FEATURES 1. Low output capacitance and high response speed The capacitance between output terminals is small; Typ. 10pF. This enables a fast operation speed of Typ. 0.2ms. 2. High sensitivity and low onresistance Max. 0.1 A of load current can be controlled with input current of 5 mA. The on resistance is less than our conventional models. 3. Low-level off state leakage current of Typ. 0.03nA (AQV227N) 4.
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