Datasheet4U Logo Datasheet4U.com

FC6546010R - Dual N-channel MOS FET

Key Features

  • s.
  • Low drive voltage: 2.5 V drive.
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
  • Marking Symbol V6.
  • Basic Part Number : Dual FK350601 (Individual).
  • Packaging Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25C Parameter Symbol Drain-source breakdown voltage VDSS FET1 Gate-source breakdown voltage VGSS FET2 Drain current ID Pulse drain current IDp Total power dissipati.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FC601 DC-DC Converter Applications Sanyo Semicon Device
FC6946010R Dual N-channel MOS FET Panasonic Semiconductor

Other Datasheets by Panasonic

Part Number Description
FC694301 Silicon N-channel MOS FET
FC6943010R Dual N-channel MOS FET
FC694601 Silicon N-channel MOS FET
FC6A21060L Gate Resistor installed Dual N-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DReovcisNioon. . T3 T4-EA-12667 FC6546010R Dual N-channel MOS FET For switching  Features  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol V6  Basic Part Number : Dual FK350601 (Individual)  Packaging Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25C Parameter Symbol Drain-source breakdown voltage VDSS FET1 Gate-source breakdown voltage VGSS FET2 Drain current ID Pulse drain current IDp Total power dissipation PT Overall Channel temperature Operating ambient temperature Tch Topr Storage temperature Tstg Rating 60 12 100 200 150 150 -40 to + 85 -55 to +150 Unit V V mA mA mW C C C Product Standards MOS FET FC6546010R 2.0 0.