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Panasonic Electronic Components Datasheet

FC6546010R Datasheet

Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-12667
FC6546010R
Dual N-channel MOS FET
For switching
Features
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol V6
Basic Part Number : Dual FK350601 (Individual)
Packaging
Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25C
Parameter
Symbol
Drain-source breakdown voltage
VDSS
FET1 Gate-source breakdown voltage
VGSS
FET2 Drain current
ID
Pulse drain current
IDp
Total power dissipation
PT
Overall
Channel temperature
Operating ambient temperature
Tch
Topr
Storage temperature
Tstg
Rating
60
12
100
200
150
150
-40 to + 85
-55 to +150
Unit
V
V
mA
mA
mW
C
C
C
Product Standards
MOS FET
FC6546010R
2.0
0.2
654
Unit : mm
0.13
123
(0.65)(0.65)
1.3
0.7
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Panasonic
JEITA
Code
SMini6-F3-B
SC-113DB
SOT-363
Internal Connection
(D1) (G2) (S2)
6 54
FET1
FET2
1 23
(S1) (G1) (D2)
Pin Name
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Established : 2010-07-02
Revised : 2013-08-26
Page 1 of 6


Panasonic Electronic Components Datasheet

FC6546010R Datasheet

Dual N-channel MOS FET

No Preview Available !

DReovcisNioon. . T3 T4-EA-12667
Product Standards
MOS FET
FC6546010R
Electrical Characteristics Ta = 25C 3C
FET1,FET2
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source breakdown voltage
VDSS ID = 1 mA, VGS = 0
60
V
Drain-source cutoff current
IDSS VDS = 60 V, VGS = 0
1.0 A
Gate-source cutoff current
IGSS VGS = 10 V, VDS = 0
10 A
Gate threshold voltage
VTH ID = 1.0 A, VDS = 3.0 V
0.9 1.2 1.5
V
Drain-source ON resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 10 mA, VGS = 4.0 V
8 15
6 12
Forward transfer admittance
|Yfs| ID = 10 mA, VDS = 3.0 V
20 60
mS
Input capacitance
Ciss
12 pF
Output capacitance
Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF
Reverse transfer capacitance
Crss
3 pF
Turn-on time *1
ton
VDD = 3 V, VGS = 0 to 3 V
ID = 10 mA
100 ns
Turn-off time *1
toff
VDD = 3 V, VGS = 3 to 0 V
ID = 10 mA
100 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Turn-on and Turn-off test circuit
Established : 2010-07-02
Revised : 2013-08-26
Page 2 of 6


Part Number FC6546010R
Description Dual N-channel MOS FET
Maker Panasonic
Total Page 7 Pages
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