* Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS = 10 V)
* High-speed switching: Qg = 2.8 nC
* Small size surface mounting package: WMini8-F1
* Contributes to miniaturization of sets, mount area reduction
* Eco-friendly Halogen-free package
* P
FC8J3304 Datasheet (285.36 KB)
FC8J3304
Panasonic
285.36 KB
Silicon n-channel mos fet.
This product complies with the RoHS Directive (EU 2002/95/EC). FC8J3304 Silicon N-channel MOS FET For DC-DC converter circuits Overview FC8J3.
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