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FC8V3303 - Silicon N-channel MOS FET

Features

  • s.
  • N-channel dual type.
  • Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V).
  • Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm).
  • Contributes to miniaturization of sets, mount area reduction.
  • Eco-friendly Halogen-free package.
  • Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surre.

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Datasheet Details

Part number FC8V3303
Manufacturer Panasonic
File Size 395.55 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet FC8V3303 Datasheet
Additional preview pages of the FC8V3303 datasheet.

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Full PDF Text Transcription

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This product complies with the RoHS Directive (EU 2002/95/EC). FC8V3303 Silicon N-channel MOS FET For DC-DC converter circuits  Overview FC8V3303 is the N-channel dual type MOSFET which is the most suitable for DC-DC converter circuits.  Features  N-channel dual type  Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V)  Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm)  Contributes to miniaturization of sets, mount area reduction  Eco-friendly Halogen-free package  Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current *1 t = 10 s VDSS VGSS ID 33 ±20 6.
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