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FC8V22080L - Gate resistor installed Dual N-channel MOS FET

Key Features

  • s y Low drain-source ON resistance:Rds(on) typ. = 13 mΩ（VGS = 4.5 V) y Built-in gate resistor y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
  • Marking Symbol: 4D.
  • Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Rating Unit Drain-source Voltage VDS 24 V Gate-source Voltage DC.
  • 1 Drain Current DC.
  • 2 Pulse.
  • 3 Total power dissipat.

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Datasheet Details

Part number FC8V22080L
Manufacturer Panasonic
File Size 262.19 KB
Description Gate resistor installed Dual N-channel MOS FET
Datasheet download datasheet FC8V22080L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DReovcisNioon. . T3 T4-EA-14491 FC8V22080L Gate resistor installed Dual N-channel MOS FET For lithium-ion secondary battery protection circuits „ Features y Low drain-source ON resistance:Rds(on) typ. = 13 mΩ（VGS = 4.5 V) y Built-in gate resistor y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) „ Marking Symbol: 4D „ Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) „ Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Rating Unit Drain-source Voltage VDS 24 V Gate-source Voltage DC *1 Drain Current DC *2 Pulse *3 Total power dissipation Ta = 25 °C, DC *1 Ta = 25 °C, DC *2 Ta = 25 °C, t = 10 s *1 Channel Temperature VGS ID1 ID2 IDp PD1 PD2 PD3 Tch ±12 7 10 70 1.0 2.0 1.