Datasheet4U Logo Datasheet4U.com

FC8J3304 - Silicon N-channel MOS FET

Features

  • s.
  • Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS = 10 V).
  • High-speed switching: Qg = 2.8 nC.
  • Small size surface mounting package: WMini8-F1.
  • Contributes to miniaturization of sets, mount area reduction.
  • Eco-friendly Halogen-free package.
  • Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source.

📥 Download Datasheet

Datasheet preview – FC8J3304

Datasheet Details

Part number FC8J3304
Manufacturer Panasonic
File Size 285.36 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet FC8J3304 Datasheet
Additional preview pages of the FC8J3304 datasheet.

📁 Similar Datasheet

  • FC801 - Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
  • FC802 - Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
  • FC803 - 30V/ 70mA Rectifier (Sanyo Semicon Device)
  • FC804 - 30V/ 200mA Rectifier (Sanyo Semicon Device)
  • FC805 - 30V/ 500mA Rectifier (Sanyo Semicon Device)
  • FC806 - 50V/ 100mA Rectifier (Sanyo Semicon Device)
  • FC807 - High-Speed Switching Composite Diode Anode Common (Sanyo Semicon Device)
  • FC808 - High-Speed Switching Composite Diode Cathode Common (Sanyo Semicon Device)
  • FC809 - 30V/ 70mA Rectifier (Sanyo Semicon Device)
  • FC80960HA25SL2GU - 80960HA/HD/HT 32-Bit High-Performance Superscalar Processor (Intel Corporation)
Other Datasheets by Panasonic

Full PDF Text Transcription

Click to expand full text
This product complies with the RoHS Directive (EU 2002/95/EC). FC8J3304 Silicon N-channel MOS FET For DC-DC converter circuits  Overview FC8J3304 is N-channel dual type small signal MOS FET employed small size surface mounting package.  Features  Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS = 10 V)  High-speed switching: Qg = 2.
Published: |