MA3J745E type equivalent, silicon epitaxial planar type.
1
MA3J745E
IF V F
103
1.0
Schottky Barrier Diodes (SBD)
VF Ta
104 Ta = 125°C
0.8
IR VR
102
75°C 25°C − 20°C
Forward current IF (mA)
Forward voltage VF (V)
.
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