MA3Z080D type equivalent, silicon epitaxial planar type.
1
MA3Z080D, MA3Z080E
IF V F
1 000 Ta = 25°C
10
Band Switching Diodes
CD VR
f = 1 MHz Ta = 25°C
IR T a
100 VR = 33 V
5 3 2
10
1
Reverse current IR (nA)
0 4 8.
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