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MIP3E50MY
MOS
(IPD)
■ •
(MIP2ExD • •
■ •
■
50% )
VD 700 VC 8 ID 1.98 IDP 3.1 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■
Control
■ •
TO-220-A2 •
1: Control 2: Source 3: Drain ■ : MIP3E50MY
Drain
Max. duty clock
SQ RQ
SQ RQ
MOSFET
: 2010 3
SLB00058BJD
Source 1
MIP3E50MY
■ TC = 25°C ± 3°C
PWM /
) *:
fOSC VC = VC(CNT) − 0.2 V, VD = 5 V
MAXDC VC = VC(CNT) − 0.2 V, VD = 5 V
*
GPWM
VC = VC(CNT)
IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) ∆VC VC(CLP) TSW / TTIM fTIM IC(CHG)
VC(CNT) * ∆VC(CNT)
VD(MIN)
VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V
VC = 0 V, VD = 40 V VC = 5 V, VD = 40 V VD = 5 V VD = 5 V
* * * *
ILIMIT ton(BLK) td(OCL) TOTP VC reset
RDS(on) IDSS
ID = 0.3 A VDS = 650 V, VC = 6.
MIP3E50MY Datasheet
