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Panasonic Electronic Components Datasheet

SK8603170L Datasheet

Silicon N-channel MOS FET

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SK8603170L pdf
DReovcisNioon. . T2 T4-EA-14480
SK8603170L
Silicon N-channel MOS FET
For Load-switching / For DC-DC Converter
Features
Low Drain-source On-state Resistance : RDS(on)typ = 3.9 m (VGS = 4.5 V)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Product Standards
MOS FET
SK8603170L
5.1
4.9
8765
Unit : mm
0.22
Marking Symbol :17
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Drain to Source Voltage
Gate to Source Voltage
Ta = 25 C, t = 10 s *1
Drain Current
Ta = 25 C, DC *1
Tc = 25 C
Total Power
Dissipation
Pulsed, Tch < 150 C *2
Ta = 25 C, DC *1
Tc = 25 C
VDS
VGS
ID
PD
30
20
28
20
59
84
2.8
24
V
A
W
Thermal Resistance
Channel to Ambient Rth(ch-a)
Channel to Case Rth(ch-c)
44
5.1
C / W
Channel Temperature
Tch 150
Operating ambient temperature
Topr -40 to +85 C
Storage Temperature Range
Tstg -55 to +150
Avalanche Current (Single pulse) *3
Avalanche Energy (Single pulse) *3
IAR
EAR
14
24
A
mJ
Note *1 Device mounted on a glass-epoxy board in Figure 1
*2 Pulse test: Ensure that the channel temperature does not exceed 150 C
*3 VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial)
1 2 3 4 0.4
1.0
1.27
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Panasonic
JEITA
Code
HSO8-F4-B
SC-111BC
Internal Connection
8765
1234
Pin Name
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Established : 2012-12-20
Revised : 2013-05-31
Figure 1 FR4 Glass-Epoxy Board
25.4 mm × 25.4 mm × 0.8 mm
Page 1 of 6


Panasonic Electronic Components Datasheet

SK8603170L Datasheet

Silicon N-channel MOS FET

No Preview Available !

SK8603170L pdf
DReovcisNioon. . T2 T4-EA-14480
Product Standards
MOS FET
SK8603170L
Electrical Characteristics Ta = 25 C 3 C
Static Characteristics
Parameter
Symbol
Conditions
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate-source Leakage Current
IGSS VGS = 16 V, VDS = 0 V
Gate-source Threshold Voltage
Vth ID = 2.56 mA, VDS = 10 V
Drain-source On-state Resistance
RDS(on)1 ID = 14 A, VGS = 10 V
RDS(on)2 ID = 14 A, VGS = 4.5 V
Dynamic Characteristics
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time *1
Rise Time *1
Turn-off Delay Time *1
Fall Time *1
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate resistance
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
rg
Conditions
VDS = 10 V, VGS = 0 V
f = 1 MHz
VDD = 15 V, VGS = 0 to 10 V
ID = 14 A
VDD = 15 V, VGS = 10 to 0 V
ID = 14 A
VDD = 15 V, VGS = 0 to 4.5 V
ID = 14 A
f = 5 MHz
Min Typ Max
30
10
10
1.3 3
2.9 4.1
3.9 5.8
Unit
V
A
A
V
m
Min Typ Max
2 100 2 940
250 350
180 290
11
10
48
7
17
6
7
1.2 3
Unit
pF
ns
ns
nC
Body Diode Characteristic
Parameter
Symbol
Conditions
Min Typ Max Unit
Diode Forward Voltage
VSD IS = 14 A, VGS = 0 V
0.8 1.2
V
Note1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Established : 2012-12-20
Revised : 2013-05-31
Page 2 of 6


Part Number SK8603170L
Description Silicon N-channel MOS FET
Maker Panasonic
Total Page 7 Pages
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