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Panasonic Electronic Components Datasheet

2SA1018 Datasheet

Silicon PNP epitaxial planer type

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Transistor
2SA1018
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473
s Features
q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–250
–200
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICEO
VCEO
VEBO
hFE*
VCE = –120V, IB = 0, Ta = 60˚C
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
60
–1 µA
V
V
220
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–1.5 V
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
50
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f= 1MHz
10 pF
*hFE Rank classification
Rank
Q
hFE 60 ~ 150
R
100 ~ 220
1


Panasonic Electronic Components Datasheet

2SA1018 Datasheet

Silicon PNP epitaxial planer type

No Preview Available !

Transistor
PC — Ta
1000
900
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
25˚C Ta=75˚C
– 0.1
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
20
IE=0
18 f=1MHz
Ta=25˚C
16
14
12
10
8
6
4
2
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–100
–90
–80
–70
–60
Ta=25˚C
IB=–1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
–50 – 0.6mA
–40 – 0.5mA
– 0.4mA
–30
– 0.3mA
–20
– 0.2mA
–10 – 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1018
–120
–100
IC — VBE
25˚C
Ta=75˚C
–25˚C
VCE=–10V
–80
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
hFE — IC
300
VCE=–10V
250
200
Ta=75˚C
150
25˚C
100 –25˚C
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
10000
3000
1000
ICEO — Ta
VCE=–120V
300
100
30
10
3
1
0 40 80 120 160 200 240
Ambient temperature Ta (˚C)
fT — IE
120
VCB=–10V
Ta=25˚C
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2


Part Number 2SA1018
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor
Total Page 2 Pages
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