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2SA1096A - Silicon NPN Transistor

Features

  • High collector to emitter voltage VCEO.
  • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5.
  • 0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2.
  • 1 5.
  • 2 Junction temperature Storage temperature 150.
  • 55 to +150 °C °C V A A W Unit.

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Full PDF Text Transcription

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Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.5 1.2 *1 5 *2 Junction temperature Storage temperature 150 −55 to +150 °C °C V A A W Unit V V 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.
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