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Panasonic Electronic Components Datasheet

2SA1310 Datasheet

Silicon PNP epitaxial planer type

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Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
s Features
q Allowing supply with the radial taping.
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Optimum for high-density mounting.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–55
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
– 0.1 µA
–1 µA
–60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
–55 V
–7 V
180 700
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA
– 0.6
V
Base to emitter voltage
VBE VCE = –1V, IC = –30mA
–1 V
Transition frequency
fT VCB = –5V, IE = 2mA, f = 200MHz
200 MHz
Noise voltage
VCE = –10V, IC = –1mA, GV = 80dB
NV
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1


Panasonic Electronic Components Datasheet

2SA1310 Datasheet

Silicon PNP epitaxial planer type

No Preview Available !

Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
10
IE=0
9 f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–100
–90
IC — VCE
Ta=25˚C
–80
–70
IB=–200µA
–60 –180µA
–50
–160µA
–140µA
–40 –120µA
–100µA
–30 –80µA
–20 –60µA
–40µA
–10 –20µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1310
–120
–100
–80
IC — VBE
25˚C
Ta=75˚C –25˚C
VCE=–5V
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
Ta=75˚C
400
25˚C
300 –25˚C
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
NV — IC
120
VCE=–10V
GV=80dB
Function=FLAT
100
80
Rg=100k
60
22k
40
5k
20
0
– 0.01 – 0.03
– 0.1
– 0.3
–1
Collector current IC (mA)
fT — IE
320
VCB=–5V
Ta=25˚C
280
240
200
160
120
80
40
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2


Part Number 2SA1310
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor
Total Page 2 Pages
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