2SA1310
Key Features
- 27 1.27 marking 1 2 3 +0.2 0.45-0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 54±0.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10µA, IE = 0 IC = -2mA, IB = 0 IE = -10µA, IC = 0 VCE = -5V, IC = -2mA IC = -100mA, IB = -10mA VCE = -1V, IC = -30mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 200 150 -60 -55 -7 180 700 - 0.6 -1 V V MHz mV min typ max - 0.1 -1 Unit µA µA V V V
- h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank
- 0±0.2 s Absolute Maximum Ratings
- 6±0.5 1 Transistor PC - Ta
